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Key Features | - Memory Compiler for Dual Port RAM in 0.35µm CMOS Process (C35/S35)
- triple metal layout data of memory
- full read/write capability on each port
- 65536 bit maximum memory size
- 8 .. 32 bits per word
- 128 .. 8192 words per DPRAM
- Simulation models for 3.3V nominal supply
- 2 separated or 1 common datain/dataout buses per port
- tri-state dataout bus
| Deliverables | - Frontend services (available via Internet)
- CADENCE
- cell library with symbol, functional, abstract and msps view
- TLF 3.0 & TLF 4.3 timing data file
- LEF file for silicon ensemble
- SDF annotable Verilog model
- VHDL
- VITAL95 compliant simulation model
- TLF timing data file for SDF generation
- LEF file for silicon ensemble
- SYNOPSYS
- cell timing model (interface model)
- MENTOR
- Design Architect symbol
- QSIM II simulation model & black box desription
- black box desription
- Backend Services (on order)
- CADENCE
- cell library with additional layout view with reduced layout data (*)
- gds2 data
- reduced layout data in gds2 format (*)
(*) reduced layout data does not contain the following layers:
- Diffusion
- Poly1
- N+ Implant
- P+ Implant
- Contact
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memory.tar
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