2010-SCR ESD for 5GHz RF-low Cap

semico_ljj

Dual SCR With Low-and-Constant Parasitic Capacitance for ESD
Protection in 5-GHz RF Integrated Circuits

Chun-Yu Lin1 and Ming-Dou Ker1,2
1 Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan
2 Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan

Abstract — Silicon-controlled rectifier (SCR) had been
reported with good electrostatic discharge (ESD) robustness
and low parasitic capacitance. In this work, SCR devices
were investigated to have low and constant capacitance for
on-chip ESD protection in RF ICs. The test devices had been
verified in a 65-nm fully-silicided CMOS process. The SCR
devices can pass 8-kV human-body-model (HBM) ESD tests,
and the parasitic capacitance at 5 GHz kept at ~135 fF with
only 3-fF variation as the input voltage swung from VSS to
VDD. Thus, the ESD protection design with SCR devices is
very suitable for RF ESD applications.
Index Terms — Electrostatic discharges (ESD), radiofrequency
integrated circuit (RF IC), silicon-controlled
rectifier (SCR).

semico_ljj

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mtwumtwu

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tingyc

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mingyulane

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alan194

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yylei

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