Sun S C，Plummer J D.
"Electron mobility in inversion and accumulation layers on thermally
oxidized silicon suface[J]. "
IEEE Transactions on Electorn Devices，1980，27:1497一1508
AND：
Wang C T. Navon D H.
"Threshold and punchthrough behavior of laterally nonuniformly doped short
channel MOSFET’s[J]. "
IEEE Transactions on Electron Devices，1983，30(7):776
/2 
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发表于 2009-3-22 21:56:55
