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suk.qi · 发表于 2008-6-11 09:57:47

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E425 - TCAD: Process and Device Simulation: 2–μm N-well CMOS Process & TSUPREM-4 Results

suk.qi · 发表于 2008-6-11 09:58:33

MEDICI
•Medici solves Poisson’s equation and the current continuity of electrons and
holes in two dimensions.
•These equations can be extended to include the heat equation and the energybalance
equations.
•The following modes of analysis can be considered:-
•DC simulation
•AC simulation
•Transient simulation
•Doping and structure information can either be input from a process simulator
e.g TSUPREM4 or generated within MEDICI
•A wide range of mobility and recombination/generation models available
•Output to parameter extraction programs such as Aurora possible

suk.qi · 发表于 2008-6-11 09:59:44

Introduction to Process and Device Simulations with TSUPREM-4 and MEDICI

suk.qi · 发表于 2008-7-16 17:11:23

这么经典的资料，看来没有需要的了。TCAD Calibration Methodology似乎会有人需要。需要的话，站内发信给我。

ericchen228 · 发表于 2008-7-16 17:58:29

......感恩!

liangmeiqi · 发表于 2008-7-21 18:06:43

还是有人在用的谢谢

wxf280 · 发表于 2008-9-13 22:50:37

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hainihao · 发表于 2008-9-13 23:20:06

luguo

darklord007 · 发表于 2011-5-26 23:00:12

thanks for sharing

darklord007 · 发表于 2011-5-29 21:13:08

thanks for sharing

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