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A CMOS bandgap reference with correction for device-to-device variation
https://ieeexplore.ieee.org/document/1328215
Abstract:
A circuit technique for compensating the device-to-device variation in bandgap voltage references is presented. The circuit senses the variation of V/sub be/ of the transistor with process and pumps into the emitter a PTAT current in direction opposite to the variation to bring it back to the right value. It also exploits the temperature coeff. of MOS V/sub t/ to compensate for higher order temperature variations. Silicon results show a variation of 60 mV across different lots and less than 50 PPM across temperature (-40/spl deg/ to 130/spl deg/C). The prototype was built in a 0.18u CMOS digital process with low /spl beta/ PNP transistors.
Published in: 2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)
Date of Conference: 23-26 May 2004
Date Added to IEEE Xplore: 03 September 2004
Print ISBN: 0-7803-8251-X
INSPEC Accession Number: 8071520
DOI: 10.1109/ISCAS.2004.1328215
Publisher: IEEE
Conference Location: Vancouver, BC, Canada
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