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发表于 2008-2-14 00:29:00
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Errata for CMOS
Revised 2nd Edition,
ISBN-13: 978-0-470-22941-5, © 2008.
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In the Revised 2nd Edition the software specific discussions, about 50 pages in chapters 1, 2, 3, and 5, were replaced with new material covering simulation and layout.
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The Revised 2nd Edition is about 1 inch thinner than the earlier printings because a lower bulking paper is used.
Typos in the 3rd and later printings of the Revised 2nd Edition
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page 979 - In Ex. 29.6 Vout should be = ¾ * Vref = 3.75V instead of ¼ * Vref = 1.25V
Typos fixed in the 2nd printing of the Revised 2nd Edition
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page 18 – bottom of the page replace: - 0.294 with - 0.119, - 16.85 with - 6.82, and the time delay in Eq. (1.9), - 234 us with - 95 us
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page 42 – second paragraph, second line “determining” is misspelled
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page 53 – the triple-well figure should be 2.24d (not 2.24c), change in first paragraph “can be used, Fig. 2.24c.” to “can be used, Fig. 2.24d.”
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page 54 – replace “Being able use the” with “Being able to use the”
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page 61 – second line change “capacitance for metal1” to “capacitance for metal2”
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page 77 – Fig. 3.23 should only have 6 pads on a side not 7 (so the total number of pads is 24 not 28)
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page 686 – 14th line down change “and to eliminate the” to “and to eliminate, or more correctly to reduce, the”
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page 687 – in Eq. (21.78) Av1 should be - gm1*ro/2. This means, in Ex. 21.12, that Av1 = - 3.75, tau_in = 1.16 ns, and thus fin = 137 MHz.
Typos fixed during the 2nd, 3rd, and 4th printings of the 2nd Edition (old edition), ISBN-13: 978-0-471-70055-5, published October 2004.
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page 25 - swap vin and vout in Fig. 1.25 (vout < vin)
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page 66 - the pulse delay in the SPICE netlist should be 50p not 5n
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page 85 - Figure 4.2(f) subtitle should indicate (e) not (g)
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page 86 - last line in second paragraph change "select" to "active"
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page 88 - figure 4.4, there shouldn't be an oxide above the silicided MOSFET S/D
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page 91 - there shouldn't be an oxide above the silicided MOSFET S/D in (h)
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page 97 - in the ninth line from the bottom change "are" to "area"
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page 99 - the rules show the minimum poly gate extension is 1 where it should be 1.25.
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page 108 - Ex. 5.2 should be a 10k resistor not 50k
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page 136 - two lines above Eq. (6.8) should be changed from "inversion and depletion cases." to "inversion and accumulation cases."
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page 139 - Equation (6.17) the term Vfb should be Vfp
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page 150 - a parentheses around nkT in Eq. 6.48
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page 153 - indicate, in the last paragraph, that hot indicates carriers with higher than thermal equilibrium energy
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page 174 - change the spinning direction of the wafer (not wrong just more common)
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page 214 - capitalize Joules in four line
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page 216 - modify figure 8.4 to show the power meter measures V^2,RMS and that the PSD is this power divided by the resolution of the spectrum analyzer
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page 228 - second line, the word SPICE should be moved to above the figure
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page 246 - ninth line down change 8.50 to 8.51
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page 272 - third line down change series to parallel
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page 273 - swap the + and - in Fig. 9.6b
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page 275 - add 1 uA next to the current source in Fig. 9.9
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page 284 - add t (time) to the bottom two equations (the sinusoids) on the page
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page 285 - add a - in front of 0.5 mV third line down
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page 289 - fix partially hidden VDS on the x-axis in Fig. 9.24
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page 295 - indicate that the temperatures are in Kelvin for Eq. (9.52)
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page 297 - indicate velocity overshoot and other effects cause the gm to increase with vgs
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page 309 - problem 9.26 change the 9.1 to 9.2
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page 311 - sixth line from the bottom change "is a 0 V" to "is at 0 V"
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page 312 - change the direction of the pulse in Fig. 10.3b
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page 327 - last line change "fetoprobes" to "femtoprobes"
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page 341 - eighth line down change 11.13 to 11.15, above this change "Latch-Ip" to "Latch-Up"
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page 348 - remove the 2 at the beginning of Eq. 11.28, and change comments describing RC line delay and the delay associated with the resistance driving the load C
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page 376 - first line change Evaluating to Increasing
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page 380 – Figure is spelled wrong in Figure 13.9
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page 395 - first line change 13.5ps to 15.75 ps
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page 446 - remove the word trench from the third line
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page 447 - 9th line down change 8-Mbit to 16-Mbit
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page 450 - 16th line down change "VDD is large" to "VDD is small", change the figure caption to 16.26 instead of 16.27
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page 451 - 11th line from the bottom of the page change "power" to "current"
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page 460 - last line change "(ideally) ,to" to "(ideally), to"
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page 466 - fix the space after the word higher in Fig. 16.53
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page 468 - change the direction of electron flow in Fig. 16.56
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page 471 - capitalize NAND in the figure caption of Fig. 16.61
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page 488 - fourth line from the bottom change "constant ,we" to "constant, we"
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page 495 - fourth line from the bottom should be 17.11b not 17.11a
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page 500 - first line change 17.15 to 17.16
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page 513 - Eq. 17.42 the (N - M)/M should be M/(N - M) also change N/2<=M<=N to 0<=M<=N/2
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page 517 – second paragraph from bottom change “The thermal noise from the capacitors is” to “The input-referred thermal noise is set by the sampling capacitors and is…”
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page 518 - Fig. 17.38 flip the polarity of the offset and first line of second paragraph change 17.33 to 17.36
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page 545 - second to the last line should be (N+1)*VDD - N*VTHN and N*VDD - N*VTHN
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page 546 - fourth line from the bottom in first paragraph change "A larger capacitor is used on node A" to "A larger capacitor is used on node B"
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page 553 - fourth line down capabilities is spelled wrong
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page 554 - seventh line down add an s to continue
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page 564 - fifth line up change 1 mV to 10 mV
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page 604 - first line change 10k to 5k
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page 618 - problem 19.14 change "that it" to "that it is"
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page 615 - fig. 20.4 change the 210k resistor to 200k
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page 620 - tenth line down change 0.2 to 0.1
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page 625 – write Eq. (20.23) in terms of the overdrive voltage as well (IREF=
and Vov=)
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page 637 - second line from the bottom change "drain" to "drain voltage" also change the MOSFET references to they refer to the correct MOSFETs
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page 639 - Fig. 20.31b change the VGS on the gate of M4 to simply VG
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page 649 - Fig. 20.45b fix typo of MB7 to MB6 (second row of PMOS)
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page 651 - fourth line down change Vbias2 to Vbias4
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page 657 - eighth line from bottom fix space in "common- source". In the last line change from 21.1 to 21.1a
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page 667 - remove square-root brackets in Eq. (21.21)
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page 674 - first line of second paragraph add extra parentheses so they are balanced
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page 686 – Eq. (21.75) should be “V^2inoise =…” instead of “V^2onoise =…”
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page 687 - take the magnitude of the second to the bottom equation
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page 688-690 - equations (21.84) and (21.85) are only valid when the drain of M2 is connected to a low impedance. Also, remove noise from M2/M3 in Eqs. (21.79) and (21.80) See here for updated pages.
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page 692 - second line from the bottom change 600 mV to 500 mV, last paragraph change all 250 mV to 280 mV
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page 694 – remove M2’s noise contributions in Eq. (21.99), show why in Fig. 21.44
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page 697 – replace the W in Eq. (21.108) with K and indicate K=12.5 (the gm scales linearly with the MOSFET’s width) and change 530 uA/V to 1.875 mA/v. Change, in the next equation, 1.88k to 533 and 0.84 to 0.95, two lines below that change 500*0.84 = 420 ==> 52.5 dB to 500*0.95 = 425 ==> 53 dB
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pages 697-703 - The symbols RL and Rload are used interchangeably. Should, to be consistent, just use Rload.
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page 702 – first equation, move the 1k out of the brackets for a Pload of 125uW, the Psupply becomes 325uW, the PCE becomes 38%, without bias circuit current PCE is 68%
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Page 715 – 11th
line from the bottom change “folded- cascode” to “folded-cascode”
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page 717 - fix the formatting of the Iss in Eq. 22.15
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page 718 - Ex. 22.4 add an s to components, remove the s on drains, add the word current after drain, and change 150 uA/V^2 to simply 150 uA/V
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page 719 - change, in Fig. 22.10's caption, 22.10 to 22.4, two lines above Eq. (22.20) change “the AC current flowing in ro4 is id1.” to “the AC current flowing in M4 is id1.” (change ro4 to M4)
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page 726 - eq. (22.32) the output noise is divided by A^2d (not the input noise), change the label on the noise source for M3 in Fig. 22.20 from 6 to 3
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page 735 - should be 3.6 V not 3.65 V and 4.4 V not 4.45 V in Ex. 22.9
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page 746 - fourth line down should indicate Ch. 5 not Ch. 7
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page 749 - remove VSS from Eq. (23.8)
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page 762 - Ex. 23.4 should say using Eq. (23.23) not (23.22)
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page 765 – add a start-up circuit to Fig. 23.27
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page 766 - change the simulation and discussion to include the start-up circuit added on the previous page
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page 769 - change figs. 23.31 and 32 as seen at: http://cmosedu.com/cmos1/book.htm
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page 774 – fifth and seventh lines from the bottom change 900 mV to 930 mV
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page 785 - indicate equation (24.19) is an approximation for |K*Cc/gm1| >> Cc/gmcg
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page 790 - Eq. 24.27 should have Acm not Ac
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page 791 - fourth and first lines from the bottom change 20.21, 21.21 to 23.21
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page 792 - Eq. (24.31) should indicate open loop gain AOL not just A
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page 793 - last line remove the square-root bracket can change the gain to -31.6
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page 794 - first line change gain from 5,000 to 15,600 and gain from 74 dB to 84 dB, also remove square-root in fourth line down
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page 795 - first line remove the word "and"
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page 800 - last line in second paragraph change fig. 24.38 to fig. 24.39
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page 802 - fig. 24.40 shift vm down a little
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page 817 - after equation (24.76) should say CLmin not CLmax
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page 820 - fourth line in second paragraph fix space in "common- source"
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page 822 - fourth line from the bottom should be 2400 fF not 2400 pF
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page 851 - fix caption for Fig. 25.29a
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page 873 - change caption for Fig. 26.14
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page 880 - second line from the bottom fix space in "common- mode"
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page 897/898 - change 10f to 50f and the 25f to 10f in Fig. 26.50 (not wrong just a little more robust)
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page 908 - change the word edition to volume in problem 26.19
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page 919 - fix space in "cross- coupled" sixth line from top, fix fig. 27.16 caption
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page 950 - third line from the bottom change 011 to 100
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page 1018 - problem 29.6 change "Fig. P29.6" to "Fig. 29.52"
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page 1019 - problem 29.7 change "5 mA" to "5 uA"
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augmented index in second and later printings
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发表于 2008-2-13 23:19:37
