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Abstract 
Noise of AlGaN/GaN HEMTs and Oscillators 
by 
Christopher Sanabria 
GaN HEMTs will likely become the solid-state device of choice for power in mi-crowave and millimeter-wave circuits. These products, such as base stations and other 
communication systems, tend to be space-constrained. Hence solutions continuously 
move from a hybrid (circuit board plus components) approach to a microwave mono-lithic integrated circuit (MMIC). To be successful in a MMIC design, GaN will have 
to perform well in other areas besides power. One of the most crucial metrics of a 
system is its noise. The noise of GaN devices and circuits has only been critically 
examined in the last five years. 
This work will investigate several aspects of the noise performance of GaN HEMTs. 
Measurements of noise figure (NF) and low-frequency noise (LFN) are used to char-acterize devices. Modeling useful for calculations and circuit simulation are applied, 
with some introduced. Several studies of NF and LFN are presented. Some confirm 
or challenge previous publications while others are new observations. Two differen-tial oscillators were built to characterize the phase noise. As it is believed that GaN 
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HEMTs will replace GaAs HEMTs in various applications, the NF, LFN, and phase 
noise of the two are compared. |   
 
 
 
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