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With this second version of Advanced Calibration Device, the selection of
models and parameters that is recommended to be used for device simulation
is extended to nonplanar devices, for example FinFETs, and to other materials,
for example SiGe and GaN, where the focus is still on low-field mobility for
silicon bulk technology nodes. In addition, high-field modeling issues and the
requirements of nonplanar devices are discussed.
附件是detailed what's new.
TCAD Sentaurus_G-2012.06.rar
(263.73 KB, 下载次数: 187 )
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