|
马上注册,结交更多好友,享用更多功能,让你轻松玩转社区。
您需要 登录 才可以下载或查看,没有账号?注册
x
本帖最后由 zhuyujun 于 2012-8-20 10:10 编辑
TABLE OF CONTENTS
Abstract …………………………………………………………………………………………..…. v
Acknowledgments …………………………………………………………………………………. vii
List of Tables ………………………………………………………………………………………. xiii
List of Figures ……...………………………………………………………...……………….….… xv
1 Introduction……………………………………………….…………………………………..... 1
1.1 Motivation ...……………………………………………...………...…………....……… 1
1.2 What is ESD ? ...………………………………………...………………...………..…… 3
1.3 On-chip ESD Protection....….…………….………………………..……………..….… 4
1.4 ESD Protection Devices: Physics and Operation………………………..…….…..… 6
1.4.1 Resistor…………………………………………..……….………………....…….. 6
1.4.2 Diode……………………………………………………………..……......….…… 8
1.4.3 NMOS Transistor……………………………………………………………....… 8
1.4.4 Silicon Controlled Rectifier (SCR) ...………………………….………….....… 10
1.5 Thesis Outline……………………………………………………..……………….….… 13
2 Characterization of ESD Phenomena………………….…….……………………….….….. 15
2.1 Types of ESD Events…………………………………………………………….…...... 15
2.1.1 Discharge to the Device……………………………………………………...….. 15
2.1.2 Discharge from the Device……………………………………………………… 16
2.1.3 Field Induced Discharge………………….……...……………………………… 17
2.2 ESD Related Failures………………………….……………………………………….. 18
2.2.1 Catastrophic Failure…………………………….……………………………...… 18
2.2.2 Latent Damage………………………………………………….……………....… 20
2.3 Experimental Techniques…………………………………………………………..….. 21
x
2.3.1 Transmission Line Pulsing (TLP)………………………………..……….……. 21
2.3.2 Emission Microscopy (EMMI)………………………………………....….….... 25
2.4 Technology under Investigation………………………………………………….….... 27
3 Non-uniform Bipolar Conduction under ESD Conditions………...…………….………… 29
3.1 Introduction…………………………………………………..……………...….…...…... 29
3.2 Experimental Evidence of Non-uniform Bipolar Conduction ...…….….....…..…... 30
3.2.1 Transmission Line Pulsing (TLP) Tests……………………….………………. 31
3.2.2 Emission Microscopy (EMMI) Analysis………………………..…….………. 34
3.3 Physical Modeling of Non-uniform Bipolar Conduction………………………...… 37
3.4 Implications for the Design of ESD Protection …………………………………..… 41
3.5 Summary………………………………………………...…………………………….… 42
4 Bias Dependencies of ESD Robustness……………………………………………….……. 43
4.1 Substrate Bias Effect…………………………………….…………………….…….…. 44
4.1.1 Intrinsic Second Breakdown Triggering Current, It2i ……………….…….…. 45
4.1.2 Device simulation Study: Principle of Operation with Vsub………….…....… 48
4.1.3 Effective Finger Width under ESD Stress……………………….…….……… 50
4.2 Gate Bias Effect…………………………………………………...……………….....… 52
4.2.1 Output NMOS Failure…………………………….…………………………...… 52
4.2.2 Experiments and Analysis……………………………………………….……… 56
4.2.3 Simulations and Discussion…………………………………………….…….… 59
4.3 Design Window for Advanced ESD Protection……………….…………...….…..… 66
4.4 Summary……………………………………………………..……………………….…. 67
5 Impact of gate-to-Contact Spacing…………………………………..……………….….…... 69
5.1 Introduction………………………………………………………………………….…... 70
5.2 Experiments…………………….…………………………………………………....….. 71
5.2.1 It2 Dependence on Contact Spacing……..…………………...…………....….… 71
5.2.2 Effect of Substrate Bias……………………..………………………………....… 75
5.3 Analysis and Discussion…………………………..……….……………………….….. 78
5.3.1 Ballasting Current Distribution………………………...…………………......… 78
5.3.2 Characteristics of the Lateral n-p-n Transistor………………….………..….... 80
xi
5.3.3 Thermal Effects…………………………….………….……………….………… 86
5.4 Summary……………………………………...…………………………..………...…… 92
6 Reverse Gate Length Dependence………………………………….………………………... 93
6.1 Introduction…………………………………………………….......…………….…….... 93
6.2 ESD Performance with Gate Length………………...……...………………..….…..... 94
6.3 Analysis and Discussion…………………………….………………………………..... 97
6.4 Summary………………………………………………………………………..……….. 103
7 Modeling of Contact Resistance……………………………………….…………………….. 105
7.1 Introduction…………………………………………..………………………......…….... 105
7.2 Temperature Dependent Specific Contact Resistance……………………...…….…. 106
7.3 Implications on ESD Reliability…………………………………………..…………... 114
7.4 Summary………………………………………………...……………………..………... 118
8 Conclusions……………………………………………………………..………………...……. 119
8.1 Contributions……………………………………………………………...……….....…. 120
8.2 Suggested Future Work……………………………………………….…….……..…… 122
Bibliography………………………………………………………………………………...……… 124 |
-
-
ESD.pdf
6.81 MB, 下载次数: 1584
, 下载积分:
资产 -3 信元, 下载支出 3 信元
|