《Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 GHz) in a 0.18 μm CMOS process》 This paper appears in:Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 Issue Date: 2000 On page(s): 251 - 259 Location: Anaheim, CA Print ISBN: 1-58537-018-5 INSPEC Accession Number: 6820021 Digital Object Identifier: 10.1109/EOSESD.2000.890084 Date of Current Version: 06 八月 2002
谢了先