1. Energy Band Theory
1.1. Electron in a crystal
1.1.1. Two examples of electron behavior
1.1.1.1. Free electron
1.1.1.2. The particle-in-a-box approach
1.1.2. Energy bands of a crystal (intuitive approach)
1.1.3. Kronig-Penney model
1.1.4. Valence band and conduction band
1.1.5. Parabolic band approximation
1.1.6. Concept of a hole
1.1.7. Effective mass of the electron in a crystal
1.1.8. Density of states in energy bands
1.2. Intrinsic semiconductor
1.3. Extrinsic semiconductor
1.3.1. Ionization of impurity atoms
1.3.2. Electron-hole equilibrium
1.3.3. Calculation of the Fermi Level
1.3.4. Degenerate semiconductor
1.4. Alignment of Fermi levels
Important Equations
Problems . .
2. Theory of Electrical Conduction
2.1. Drift of electrons in an electric field.
2.2. Mobility
2.3. Drift current
2.3.1. Hall effect
2.4. Diffusion current .
2.5. Drift-diffusion equations
2.5.1. Einstein relationships
2.6. Transport equations .
2.7. Quasi-Fermi levels
Important Equations
Problems
3. Generation/Recombination Phenomena
3.1. Introduction
3.2. Direct and indirect transitions
3.3. Generation/recombination centers
3.4. Excess carrier lifetime
3.5. SRH recombination
3.5.1. Minority carrier lifetime
3.6. Surface recombination
Important Equations
Problems
4. The PN junction Diode
4.1. Introduction
4.2. Unbiased PN junction
4.3. Biased PN junction
4.4. Current-voltage characteristics
4.4.1. Derivation of the ideal diode model
4.4.2. Generation/recombination current
4.4.3. Junction breakdown
4.4.4. Short-base diode
4.5. PN junction capacitance
4.5.1. Transition capacitance
4.5.2. Diffusion capacitance
4.5.3. Charge storage and switching time
4.6. Models for the PN junction
4.6.1. Quasi-static, large-signal model
4.6.2. Small-signal, low-frequency model
4.6.3. Small-signal, high-frequency model
4.7. Solar cell
4.8. PiN diode
Important Equations
Problems
5. Metal-semiconductor contacts
5.1. Schottky diode .
5.1.1. Energy band diagram
5.1.2. Extension of the depletion region
5.1.3. Schottky effect
5.1.4. Current-voltage characteristics
5.1.5. Influence of interface states
5.1.6. Comparison with the PN junction
5.2. Ohmic contact .
Important Equations
Problems
6. JFET and MESFET
6.1. The JFET
6.2. The MESFET
Important Equations
7. The MOS Transistor
7.1. Introduction and basic principles
7.2. The MOS capacitor
7.2.1. Accumulation
7.2.2. Depletion
7.2.3. Inversion
7.3. Threshold voltage
7.3.1 Ideal threshold voltage
7.3.2. Flat-band voltage
7.3.3. Threshold voltage
7.4. Current in the MOS transistor
7.4.1. Influence of substrate bias on threshold voltage
7.4.2. Simplified model
7.5. Surface mobility
7.6. Carrier velocity saturation
7.7. Subthreshold current - Subthreshold slope
7.8. Continuous model
7.9. Channel length modulation
7.10. Numerical modeling of the MOS transistor
7.11. Short-channel effect
7.12. Hot-carrier degradation
7.12.1. Scaling rules
7.12.2. Hot electrons
7.12.3. Substrate current.
7.12.4. Gate current
7.12.5. Degradation mechanism
7.13. Terminal capacitances
7.14. Particular MOSFET structures
7.14.1. Non-Volatile Memory MOSFETs
7.14.2. SOI MOSFETs
7.15. Advanced MOSFET concepts
7.15.1. Polysilicon depletion
7.15.2. High-k ielectrics
7.15.3. Drain-induced barrier lowering (DIBL)
7.15.4. Gate-induced drain leakage (GIDL)
7.15.5. Reverse short-channel effect
7.15.6. Quantization effects in the inversion channel
Important Equations
Problems
8. The Bipolar Transistor
8.1. Introduction and basic principles
8.1.1. Long-base device
8.1.2. Short-base device
8.1.3. Fabrication process
8.2. Amplification using a bipolar transistor
8.3. Ebers-Moll model
8.3.1. Emitter efficiency
8.3.2. Transport factor in the base
8.4. Regimes of operation
8.5. Transport model
8.6. Gummel-Poon model
8.6.1. Current gain
8.6.1.1. Recombination in the base
8.6.1.2. Emitter efficiency and current gain
8.7. Early effect
8.8. Dependence of current gain on collector current
8.8.1. Recombination at the emitter-base junction
8.8.2. Kirk effect
8.9. Base resistance
8.10. Numerical simulation of the bipolar transistor
8.11. Collector junction breakdown
8.11.1. Common-base configuration
8.11.2. Common-emitter configuration
8.12. Charge-control model
8.12.1. Forward active mode
8.12.2. Large-signal model
8.12.3. Small-signal model
Important Equations
Problems
9. Heterojunction Devices
9.1. Concept of a heterojunction
9.1.1. Energy band diagram
9.2. Heterojunction bipolar transistor (HBT)
9.2. High electron mobility transistor (HEMT)
9.3. Photonic Devices
9.3.1. Light-emitting diode (LED)
9.3.2. Laser diode
Problems
10. Quantum-Effect Devices .
10.1. Tunnel Diode
10.1.1. Tunnel effect
10.1.2. Tunnel diode
10.2. Low-dimensional devices
10.2.1. Energy bands
10.2.2. Density of states
10.2.3. Conductance of a 1D semiconductor sample
10.2.4. 2D and ID MOS transistors
10.3. Single-electron transistor
10.3.1. Tunnel junction
10.3.2. Double tunnel junction
10.3.3. Single-electron transistor
Problems
11. Semiconductor Processing
11.1. Semiconductor materials
11.2. Silicon crystal growth and refining
11.3. Doping techniques
11.3.1. Ion implantation
11.3.2. Doping impurity diffusion
11.3.3. Gas-phase diffusion
11.4. Oxidation
11.5. Chemical vapor deposition (CVD)
11.5.1. Silicon deposition and epitaxy
11.5.2. Dielectric layer deposition
11.6. Photolithography
11.7. Etching
11.8. Metallization
11.8.2. Metal deposition
11.8.3. Metal silicides
11.9. CMOS process
11.10. NPN bipolar process
Problems
12. Annex
Al. Physical Quantities and Units
A2. Physical Constants
A3. Concepts of Quantum Mechanics
A4. Crystallography Reciprocal Space
A5. Getting Started with Matlab
A6. Greek alphabet
A7. Basic Differential Equations
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