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【TCAD新书】TCAD: fundamentals, simulations and applications

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发表于 2017-6-13 17:24:08 | 显示全部楼层 |阅读模式

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本帖最后由 junliang0701 于 2017-6-16 20:19 编辑

Introducing Technology Computer-Aided Design (TCAD): Fundamentals, Simulations, and Applications
by Chinmay K.  Maiti


  • Publisher: Pan Stanford; 1 edition (March 27, 2017)
  • Language: English
  • ISBN-10: 9814745510
  • ISBN-13: 978-9814745512


More Info:
CRC Press
Amazon



#---------------------------------------------

Author(s) Bio

Chinmay K. Maiti received his B.Sc. (Hons.) in physics (1969), B.Tech. in applied physics (1972), and M.Tech. in radio physics and electronics (1974) from the University of Calcutta, India. He then did his M.Sc. (Res.) in microelectronics (1976) from Loughborough University, UK, and PhD (Eng.) in microelectronics (1984) from the Indian Institute of Technology (IIT), Kharagpur, India. He later joined IIT as professor and was head of the department (2009–2012). From 2004 to 2006 he was a visiting professor at Queen’s University, Belfast, UK. Ignoring an extension offer from IIT, he joined the SOA University, Bhubaneswar, India, in 2015. Dr. Maiti won the INSA-Royal Society (UK) Exchange of Scientists Fellowship in 2003, the CDIL Award for Industry of the Institution of Electronics and Telecommunication Engineers for the best paper in 1997, and the West Bengal Academy of Sciences Fellowship in 2007. He is interested in semiconductor device/process simulation research and microelectronics education. He has published more than 265 technical articles in the silicon-germanium and heterostructure-silicon areas, written 6 monographs and 6 book chapters, and edited Selected Works of Professor Herbert Kroemer (World Scientific, Singapore, 2008).                    

#---------------------------------------------

Features
  • Computer-aided microelectronics education to enhance student learning
  • First book providing a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction
  • Two- and three-dimensional process and device simulation examples described in detail, facilitating the learning of process and device design through simulation
  • Broad coverage spanning from conventional to state-of-the-art stress- and strain-engineered devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, FinFETs, silicon-germanium (SiGe) hetero-FETs, solar cells, power devices, and memory devices

Summary

This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation.
Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors.
The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.                                            

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补充内容 (2019-7-22 22:06):
有人反馈看不到附件,给出某盘下载链接,需要请自取:
链接: https://pan.baidu.com/s/1DgoHWgGcZ2mMZx5bnuM4TA 提取码: bx6c 复制这段内容后打开百度网盘手机A...
发表于 2017-6-14 01:50:50 | 显示全部楼层
Nice, thank you
发表于 2017-6-14 08:51:30 | 显示全部楼层
thank you
发表于 2017-6-14 20:54:17 | 显示全部楼层
学习一下!!!!!!
发表于 2017-6-15 00:49:21 | 显示全部楼层
thank you
发表于 2017-6-15 05:12:22 | 显示全部楼层
A really new book
发表于 2017-6-15 20:58:59 | 显示全部楼层
学习!!!!!!
发表于 2017-6-17 20:41:47 | 显示全部楼层
Thanks a lot!!
发表于 2017-6-17 23:08:47 | 显示全部楼层
感谢分享
发表于 2017-6-18 04:23:08 | 显示全部楼层
Thanks
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