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[资料] 闪存是咋回事:Inside NAND Flash Memories

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发表于 2016-3-10 23:02:40 | 显示全部楼层 |阅读模式

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Inside NAND Flash Memories
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销售配送:  由亚马逊直接销售和发货。  
全新品2  售价从 ¥1,210.20起

Inside.NAND.Flash.Memories.pdf (15.08 MB, 下载次数: 484 )

出版社: Springer; 2010 (2010年8月18日)
精装: 582页
语种: 英语
ISBN: 904819430X
条形码: 9789048194308
商品尺寸:  15.6 x 3.2 x 23.4 cm
商品重量:  1 Kg
ASIN: 904819430X

Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera…), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console. The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses. Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (Analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.

目录


Preface. Acknowledgements.

1 Market and applications for NAND flash memories; Gregory Wong.

2 NAND overview: from memory to systems; R. Micheloni, A. Marelli and S. Commodaro.

3 Program and erase of NAND memory arrays; Cristoph Friederich.

4 Reliability issues of NAND flash memories; C. Zambelli, A. Chimenton and P. Olivo.

5 Charge trap NAND technologies ; Alessandro Grossi.

6 Control logic; A. Marelli, R. Micheloni and R. Ravasio.

7 NAND DDR interface; Andrea Silvagni.

8 Sensing circuits; L. Crippa and R. Micheloni.

9 Parasitic effects and verify circuits; L. Crippa and R. Micheloni.

10 MLC storage; L. Crippa and R. Micheloni.

11 Charge pumps, voltage regulators and HV switches; R. Micheloni and L. Crippa.

12 High voltage overview; R. Micheloni and A. Marelli.

13 Redundancy; A. Marelli and R. Micheloni.

14 Error correction codes; T. Zhang, A. Marelli and R. Micheloni.

15 NAND design for testability and testing; Andrea Silvagni.

16 XLC storage; R. Micheloni and L. Crippa.

17 Flash cards; A. Ghilardelli and S. Corno.

18 Low power 3D-integrated SSD; K. Takeuchi.

19 Radiation effects on NAND Flash memories; M. Bagatin, G. Cellere, S. Gerardin and A. Paccagnella.

About the authors. Index.
发表于 2016-5-19 18:23:28 | 显示全部楼层
非常不错,谢谢!
发表于 2016-6-4 18:56:02 | 显示全部楼层
good book
发表于 2016-6-29 19:16:10 | 显示全部楼层
感谢分享~~~
发表于 2016-8-17 14:52:58 | 显示全部楼层
great thanks !
发表于 2016-11-11 19:31:18 | 显示全部楼层
很不错,每个主题都是专业人士
发表于 2017-7-8 11:47:27 | 显示全部楼层
最近开始研究flash,在查找资料的过程中找到这篇文档。多谢
发表于 2017-7-8 12:15:25 | 显示全部楼层
好资料,多谢分享。
 楼主| 发表于 2017-7-9 00:09:10 | 显示全部楼层
发表于 2018-1-13 10:12:12 | 显示全部楼层
谢谢分享~~~
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