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[讨论] PN结反偏的判断标准以哪个为准

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发表于 2018-3-13 09:06:58 | 显示全部楼层 |阅读模式
以前的印象是大多数教材和资料里面都将Vn>Vp作为反偏的标准,今天看到Martin的 《analog integrated circuit design》一书中提到PN 正向电压小于一定值就称为反偏,原文如下:A silicon diode having an anode-to-cathode (i.e., p side to n side) voltage of 0.4 V or less will not be conducting appreciable current. In this case, it is said to be reverse-biased. If a diode is reverse-biased, current flow is primarily due to thermally generated carriers in the depletion region, and it is extremely small. Although this reverse-biased current is only weakly dependent on the applied voltage, the reverse-biased current is directly proportional to the area of the diode junction.
为什么会有这样不同的定义,请高人解答。
发表于 2018-3-13 16:57:36 | 显示全部楼层
个人觉得,反偏是反偏,导通是导通,很简单,不混淆就好。。
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