Boradband Opto-electrical receivers in standar CMOS

mcjoyway

The gradual recovery of the optical industry since 2004 has enabled new developments
in the communication, consumer and entertainment markets. Lots
of new applications are emerging where high volumes and low cost aspects are
crucial. To meet these demands, silicon microphotonics aims for the manufacturing
of opto-electrical components in the same platform that has enabled
Moore’s Law: single-crystal silicon.
The presented work fits in this quest for integrated opto-electrical solutions,
and focuses on the receiver front-end. To further reduce the cost, the
cheapest technology is selected: standard CMOS, without any optical tricks or
flavors. Despite the inherent lower optical performance of a mainstream CMOS
process, it is shown in theory and practice that light detection is feasible with
CMOS diodes. Furthermore, speed enhancement techniques are presented to
extend the speed performance above 1 Gbit/s.
The three receiver blocks examined in this work are the photodiode
(PD), the transimpedance amplifier (TIA) and the limiting amplifier (LA).
First, to thoroughly understand the light detection mechanisms in silicon,
[Hermans_Steyaert]Broadband Opto-Electrical Receivers in Standard CMOS.pdf (4 MB, 下载次数: 38 )

2018-1-20 21:09 上传

点击文件名下载附件

im.leo

多谢分享

apteye

thankyou.down

amigo.change