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本帖最后由 遁入空门 于 2014-10-4 10:38 编辑
施敏原版英文教材 半导体器件物理（physics of semiconductor devices）第三版
Part I Semiconductor Physics
Chapter 1 Physics and Properties of Semiconductors-A Review 7
1.1 Introduction, 7
1.2 Crystal Structure, 8
1.3 Energy Bands and Energy Gap, 12
1.4 Carrier Concentration at Thermal Equilibrium, 16
1.5 Carrier-Transport Phenomena, 28
1.6 Phonon, Optical, and Thermal Properties, 50
1.7 Heterojunctions and Nanostructures, 56
1.8 Basic Equations and Examples, 62
Part I1 Device Building Blocks
Chapter 2 p-n Junctions
2.1 Introduction, 79
2.2 Depletion Region, 80
2.3 Current-Voltage Characteristics, 90
2.4 Junction Breakdown, 102
2.5 Transient Behavior and Noise, 114
2.6 Terminal Functions, 11 8
2.7 Heterojunctions, 124
Chapter 3 Metal-Semiconductor Contacts
3. I Introduction, 134
3.2 Formation of Barrier, 135
3.3 Current Transport Processes, 153
3.4 Measurement of Barrier Height, 170
3.5 Device Structures, 181
3.6 Ohmic Contact, 187
79 134
Vii
Chapter 4 Metal-Insulator-Semiconductor Capacitors
4.1 Introduction, 197
4.2 Ideal MIS Capacitor, 198
4.3 Silicon MOS Capacitor, 213
Part I11 Transistors
Chapter 5 Bipolar Transistors
5.1 Introduction, 243
5.2 Static Characteristics, 244
5.3 Microwave Characteristics, 262
5.4 Related Device Structures, 275
5.5 Heterojunction Bipolar Transistor, 282
Chapter 6 MOSFETs
6.1 Introduction, 293
6.2 Basic Device Characteristics, 297
6.3 Nonuniform Doping and Buried-Channel Device, 320
6.4 Device Scaling and Short-Channel Effects, 328
6.5 MOSFET Structures, 339
6.6 Circuit Applications, 347
6.7 Nonvolatile Memory Devices, 350
6.8 Single-Electron Transistor, 360
Chapter 7 JFETs, MESFETs, and MODFETs
7.1 Introduction, 374
7.2 JFET and MESFET, 375
7.3 MODFET, 401
Part IV Negative-Resistance and Power Devices
Chapter 8 Tunnel Devices
8.1 Introduction, 417
8.2 Tunnel Diode, 418
8.3 Related Tunnel Devices, 435
8.4 Resonant-Tunneling Diode, 454
Chapter 9 IMPATT Diodes
9.1 Introduction, 466
197 243 293 374 417
466 CONTENTS ix
9.2 Static Characteristics, 467
9.3 Dynamic Characteristics, 474
9.4 Power and Efficiency, 482
9.5 Noise Behavior, 489
9.6 Device Design and Performance, 493
9.7 BARITT Diode, 497
9.8 TUNNETT Diode, 504
Chapter 10 Transferred-Electron and Real-Space-Transfer Devices 510
10.1 Introduction, 5 10
10.2 Transferred-Electron Device, 5 1 1
10.3 Real-Space-Transfer Devices, 536
Chapter 11 Thyristors and Power Devices
11.1 Introduction, 548
11.2 Thyristor Characteristics, 549
11.3 Thyristor Variations, 574
11.4 Other Power Devices, 582
Part V Photonic Devices and Sensors
Chapter 12 LEDs and Lasers
12.1 Introduction, 601
12.2 Radiative Transitions, 603
12.3 Light-Emitting Diode (LED), 608
12.4 Laser Physics, 621
12.5 Laser Operating Characteristics, 630
12.6 Specialty Lasers, 651
Chapter 13 Photodetectors and Solar Cells
13.1 Introduction, 663
13.2 Photoconductor, 667
13.3 Photodiodes, 671
13.4 Avalanche Photodiode, 683
13.5 Phototransistor, 694
13.6 Charge-Coupled Device (CCD), 697
13.7 Metal-Semiconductor-Metal Photodetector, 7 12
13.8 Quantum-Well Infrared Photodetector, 7 16
13.9 Solar Cell, 719
548
60 1
663 x CONTENTS
Chapter 14 Sensors
14.1 Introduction, 743
14.2 Thermal Sensors, 744
14.3 Mechanical Sensors, 750
14.4 Magnetic Sensors, 758
14.5 Chemical Sensors, 765
Appendixes
A. List of Symbols, 775
B. International System of Units, 785
C. Unit Prefixes, 786
D. Greek Alphabet, 787
E. Physical Constants, 788
F. Properties of Important Semiconductors, 789
G. Properties of Si and GaAs, 790
H. Properties of SiO, and Si,N,, 791
743
773
Index 793 |
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发表于 2014-10-3 12:30:32
