《Improving the ESD failure threshold of silicided n-MOS output transistors by ensuring uniform current flow》 This paper appears in:Electron Devices, IEEE Transactions on Issue Date: Feb 1992 Volume: 39 Issue: 2 On page(s): 379 - 388 ISSN: 0018-9383 INSPEC Accession Number: 4129483 Digital Object Identifier: 10.1109/16.121697 Date of Current Version: 06 八月 2002
多谢,多谢!