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发表于 2017-4-20 10:53:00
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回复 1# joseph986
R3D : 1 extracted device instances found matching "r3d_channel" command with "device=p"
R3D : 1 extracted device instances found matching "r3d_channel" command with "device=n"
From CCI: for device "n": NG=1 L=7e-08, Wtot=5e-07
R3DSTAT: points total 694
R3DSTAT: Di 1 Drn pnts 6 Src pnts 6 Via pnts 4 Tot W 0.5 Tot CA 0.02 Tot G 4 Tot VA 0 Tot VG 0
Layer 5 (DIFF) points 24
Layer 7 (METAL1) points 670
Layer resistivities and thicknesses:
Layer METAL1 r [Ohm/sq] = 0.05 t [um] = 0.2
Start solution
Using channel: device: n resistance: 5000
IMS ordering...
IMS Ordering: wall:0.1s(0.9s), cpu:0.0s(0.8s), vmem:0M(257M)
IMS factorization...
IMS factorization: wall:0.1s(0.9s), cpu:0.0s(0.8s), vmem:0M(257M)
Current_[A]: s1: -9.9986e-06 d1: 9.9986e-06 S/D: -9.9986e-06
Rdson_[Ohm] = 10001.4
Writing data to nmos_org.dat file, R3DDRAW version 207
---------------------------------------------------------------
Table of resistive components contributions to Rdson (in Ohms)
---------------------------------------------------------------
Component Type Res_[Ohm] Source_[Ohm] Drain_[Ohm]
---------------------------------------------------------------
DIFF MET 0.0197799 0.00989838 0.00988153
METAL1 MET 0.404327 0.202616 0.201711
DCONT VIA 1.00041 0.50017 0.500236
s1 TC 0
d1 TC 0
---------------------------------------------------------------
Interconnects ALL 1.42451 0.712684 0.711828
channel DEV 10000
Total Rdson 10001.4
===============================================================
Extracted channel/gate width [um]: 0.5
Average channel resistivity [Ohm*um]: 5000
---------------------------------------------------------------
----------------------------------------------------
Top contact information
----------------------------------------------------
Name V_[V] I_[A] Node_name
----------------------------------------------------
s1 0 -9.99858e-06 src
d1 0.1 9.99858e-06 drn
----------------------------------------------------
Processed 1 segment: wall:0.9s, cpu:0.9s+0.0s, vmem:140M
Solving nmos_org.cfg: wall:0.7s(0.9s), cpu:0.8s(0.9s), vmem:23M(140M)
------------------------------------------------------
SIMULATION COMPLETED WITH 2 WARNINGS, CHECK LOG FILE.
[user01@node05 r3d_CCI_flow]$ cd /eda/R3D/SFT_ROOT/examples/r3d_tutorials/r3d_EM_analysis
[user01@node05 r3d_EM_analysis]$ ls
README layout.gds p2lvsfile r3d_EM_analysis.cfg r3d_tutorial.rule.lyp
emrules limits.txt procfile r3d_tutorial.rule tutorial.html
[user01@node05 r3d_EM_analysis]$ r3d r3d_EM_analysis.cfg
*******************************************************************************
R3D Version 2016.1 Linux 64-bit
Build 21, Sep 17 2016, 02:00:56
Copyright (c) 2007-2016 Silicon Frontline Technology Inc.
*******************************************************************************
Running on node05 (2 CPUs, 2005 MB).
Command line: /eda/R3D/SFT_ROOT/plat/Linux2.6-x86_64/bin/r3d r3d_EM_analysis.cfg
Using 1 local thread.
Reading rc file "/eda/R3D/SFT_ROOT/etc/r3drc"...
r3d_solver 2
Reading control file "r3d_EM_analysis.cfg"...
input layout.gds
techfile procfile p2lvsfile
rulefile r3d_tutorial.rule
r3d_start_layer metal1
r3d_end_layer metal3
r3d_mesh_for_device size=2.0
r3d_mesh_for_cont size=2.0
r3d_mesh_for_via dx=1. dy=1.
r3d_mesh_for_top_contacts 40
r3d_device_resistance 5000.0
r3d_top_contact v=0.0 xc=0. yc=73. dx=20. dy=20. r=0. source name=s1 circular node=src
r3d_top_contact v=0.0 xc=-30. yc=73. dx=20. dy=20. r=0.01 source name=s2 circular node=src
r3d_top_contact v=0.0 xc=30. yc=73. dx=20. dy=20. r=0.02 source name=s3 circular node=src
r3d_top_contact v=0.1 xc=0. yc=-70. dx=20. dy=20. r=0 drain name=d1 circular node=drn
r3d_top_contact v=0.1 xc=-30. yc=-70. dx=20. dy=20. r=0.03 drain name=d2 circular node=drn
r3d_top_contact v=0.1 xc=30. yc=-70. dx=20. dy=20. r=0.05 drain name=d3 circular node=drn
r3d_dat_file 1
r3d_rdson_table
viagr 0
Reading include file "emrules"...
em_rule type=metal name=metal1 jpeak=0.002 lrn=231
em_rule type=metal name=metal2 jpeak=0.002 lrn=232
em_rule type=metal name=metal3 jpeak=0.010 lrn=233
em_rule type=via name=via1 jpeak=0.004 lrn=241
em_rule type=via name=via2 jpeak=0.004 lrn=242
em_rule type=via name=diff_cont jpeak=0.004 lrn=240
r3d_total_current 1.0
Using default mode: 'adjust=linear'.
Checking out license...
Checkout succeeded: SOLVE_BASE/0FC1 8019 BB2A 165C
License file: /eda/R3D/SFT_ROOT/license/license.lic
No server used
Checkout succeeded: SOLVE_R3D_ANALYSIS/0FC1 8019 BB2A 165C
License file: /eda/R3D/SFT_ROOT/license/license.lic
No server used
=================================
INPUT STATS
Cell Polygons (Flat)
-------------- ----------------
array2 2 (20119)
via2 1 (1)
big_row_sd 0 (2952)
big_row_drain 1 (1465)
via1 0 (22)
noname_1 22 (22)
big_row 2 (1024)
row 0 (250)
unit 3 (25)
contacts 22 (22)
big_row_source 1 (1487)
=================================
Input reading: wall:0.6s(0.8s), cpu:0.6s(0.8s), vmem:4M(140M)
Size of global state: 0.2 MB
Persistence check: wall:0.1s(0.9s), cpu:0.2s(0.9s), vmem:7M(147M)
Input preprocessing: wall:0.0s(0.9s), cpu:0.1s(0.9s), vmem:0M(147M)
*******************************************************************************
Top cell is set to 'array2'
*******************************************************************************
Flattening: wall:0.1s(1.0s), cpu:0.1s(0.9s), vmem:3M(188M)
Total number of nets:43
CKTSTAT: Number of devices : 40
CKTSTAT: Number of nets : 42
CKTSTAT: Number of polygons(non-ort) : 21289(2)
CKTSTAT: Number of points : 85172
=============================================
DEVICE STATS
Type Name Seed modelName Instances
---- -------- --------- --------- ---------
M MN(nmos) gate_poly nmos 40
=============================================
Preprocessing: wall:1.7s(2.6s), cpu:1.7s(2.5s), vmem:59M(206M)
Start layer metal1 found (# 7)
End layer metal3 found (# 11)
R3DSTAT: points total 153510
R3DSTAT: Di 40 Drn pnts 1180 Src pnts 1239 Via pnts 9020 Tot W 4600 Tot CA 1127.5 Tot G 1127.5 Tot VA 1903 Tot VG 7612
Layer 5 (diff) points 11521
Layer 7 (metal1) points 46330
Layer 9 (metal2) points 39000
Layer 11 (metal3) points 56659
Layer resistivities and thicknesses:
Layer metal1 r [Ohm/sq] = 0.05 t [um] = 0.7
Layer via1 r [Ohm/via] = 1 unit_area [um2] = 0.25
Layer metal2 r [Ohm/sq] = 0.05 t [um] = 0.7
Layer via2 r [Ohm/via] = 1 unit_area [um2] = 0.25
Layer metal3 r [Ohm/sq] = 0.01 t [um] = 3.5
Start solution
IMS ordering...
IMS Ordering: wall:2.1s(5.7s), cpu:2.2s(5.6s), vmem:4M(353M)
IMS factorization...
IMS factorization: wall:3.4s(9.5s), cpu:3.4s(9.3s), vmem:0M(457M)
Current_[A]: s1: -0.072206 s2: -0.010789 s3: -0.007079 d1: 0.081765 d2: 0.004938 d3: 0.003371 V1: 0.090074 -0.090074 V2: 0.090074 -0.090074 S/D: -0.090074
Rdson_[Ohm] = 1.1102
*************************************************************
R3D results are linearly scaled from Ids=0.090074A to Ids=1A.
Top contact voltages and current after rescaling:
Name Voltage [V] Current [A]
---- ----------- -----------
s1 0 -0.801632
s2 0 -0.119777
s3 0 -0.0785912
d1 1.1102 0.907753
d2 1.1102 0.0548218
d3 1.1102 0.0374248
*************************************************************
Writing data to r3d_EM_analysis.dat file, R3DDRAW version 207
*************************************************************
Current density verification:
EM_RULE VIOLATIONS: 5 -- check the report file(s):
r3d_EM_analysis.em_report
GDS__r3d_EM_analysis/SD.gds.gz
*************************************************************
---------------------------------------------------------------
Table of resistive components contributions to Rdson (in Ohms)
---------------------------------------------------------------
Component Type Res_[Ohm] Source_[Ohm] Drain_[Ohm]
---------------------------------------------------------------
diff MET 0.00026936 0.000133608 0.000135753
metal1 MET 0.00148675 0.000738474 0.000748274
metal2 MET 0.0012088 0.000557409 0.000651388
metal3 MET 0.0131283 0.00641618 0.00671208
diff_cont VIA 0.00361167 0.00178295 0.00182872
via1 VIA 0.00189949 0.000938019 0.000961467
via2 VIA 0.00119244 0.000578912 0.000613524
s1 TC 0
s2 TC 0.000143466
s3 TC 0.000123533
d1 TC 0
d2 TC 9.01644e-05
d3 TC 7.00317e-05
---------------------------------------------------------------
Interconnects ALL 0.0232239 0.0114125 0.0118114
channel DEV 1.08697
Total Rdson 1.1102
===============================================================
Extracted channel/gate width [um]: 4600
Average channel resistivity [Ohm*um]: 5000.08
---------------------------------------------------------------
----------------------------------------------------
Top contact information
----------------------------------------------------
Name V_[V] I_[A] Node_name
----------------------------------------------------
s1 0 -0.801632 src
s2 0 -0.119777 src
s3 0 -0.0785912 src
d1 1.1102 0.907753 drn
d2 1.1102 0.0548218 drn
d3 1.1102 0.0374248 drn
----------------------------------------------------
Processed 1 segment: wall:13.7s, cpu:13.3s+0.0s, vmem:220M
Solving r3d_EM_analysis.cfg: wall:13.5s(13.7s), cpu:13.1s(13.3s), vmem:84M(220M)
[user01@node05 r3d_EM_analysis]$ r3d r3d_EM_analysis.cfg
*******************************************************************************
R3D Version 2016.1 Linux 64-bit
Build 21, Sep 17 2016, 02:00:56
Copyright (c) 2007-2016 Silicon Frontline Technology Inc.
*******************************************************************************
Running on node05 (2 CPUs, 2005 MB).
Command line: /eda/R3D/SFT_ROOT/plat/Linux2.6-x86_64/bin/r3d r3d_EM_analysis.cfg
Using 1 local thread.
Reading rc file "/eda/R3D/SFT_ROOT/etc/r3drc"...
r3d_solver 2
Reading control file "r3d_EM_analysis.cfg"...
input layout.gds
techfile procfile p2lvsfile
rulefile r3d_tutorial.rule
r3d_start_layer metal1
r3d_end_layer metal3
r3d_mesh_for_device size=2.0
r3d_mesh_for_cont size=2.0
r3d_mesh_for_via dx=1. dy=1.
r3d_mesh_for_top_contacts 40
r3d_device_resistance 5000.0
r3d_top_contact v=0.0 xc=0. yc=73. dx=20. dy=20. r=0. source name=s1 circular node=src
r3d_top_contact v=0.0 xc=-30. yc=73. dx=20. dy=20. r=0.01 source name=s2 circular node=src
r3d_top_contact v=0.0 xc=30. yc=73. dx=20. dy=20. r=0.02 source name=s3 circular node=src
r3d_top_contact v=0.1 xc=0. yc=-70. dx=20. dy=20. r=0 drain name=d1 circular node=drn
r3d_top_contact v=0.1 xc=-30. yc=-70. dx=20. dy=20. r=0.03 drain name=d2 circular node=drn
r3d_top_contact v=0.1 xc=30. yc=-70. dx=20. dy=20. r=0.05 drain name=d3 circular node=drn
r3d_dat_file 1
r3d_rdson_table
viagr 0
Reading include file "emrules"...
em_rule type=metal name=metal1 jpeak=0.002 lrn=231
em_rule type=metal name=metal2 jpeak=0.002 lrn=232
em_rule type=metal name=metal3 jpeak=0.010 lrn=233
em_rule type=via name=via1 jpeak=0.004 lrn=241
em_rule type=via name=via2 jpeak=0.004 lrn=242
em_rule type=via name=diff_cont jpeak=0.004 lrn=240
r3d_total_current 1.0
Using default mode: 'adjust=linear'.
Checking out license...
Checkout succeeded: SOLVE_BASE/0FC1 8019 BB2A 165C
License file: /eda/R3D/2015.1/license/license.lic
No server used
Checkout succeeded: SOLVE_R3D_ANALYSIS/0FC1 8019 BB2A 165C
License file: /eda/R3D/2015.1/license/license.lic
No server used
=================================
INPUT STATS
Cell Polygons (Flat)
-------------- ----------------
array2 2 (20119)
via2 1 (1)
big_row_sd 0 (2952)
big_row_drain 1 (1465)
via1 0 (22)
noname_1 22 (22)
big_row 2 (1024)
row 0 (250)
unit 3 (25)
contacts 22 (22)
big_row_source 1 (1487)
=================================
Input reading: wall:0.6s(0.8s), cpu:0.7s(0.8s), vmem:4M(140M)
Size of global state: 0.2 MB
Persistence check: wall:0.1s(0.9s), cpu:0.1s(0.8s), vmem:7M(147M)
Input preprocessing: wall:0.0s(0.9s), cpu:0.1s(0.9s), vmem:0M(147M)
*******************************************************************************
Top cell is set to 'array2'
*******************************************************************************
Flattening: wall:0.1s(1.0s), cpu:0.1s(0.9s), vmem:3M(188M)
Total number of nets:43
CKTSTAT: Number of devices : 40
CKTSTAT: Number of nets : 42
CKTSTAT: Number of polygons(non-ort) : 21289(2)
CKTSTAT: Number of points : 85172
=============================================
DEVICE STATS
Type Name Seed modelName Instances
---- -------- --------- --------- ---------
M MN(nmos) gate_poly nmos 40
=============================================
Preprocessing: wall:1.7s(2.6s), cpu:1.7s(2.5s), vmem:59M(206M)
Start layer metal1 found (# 7)
End layer metal3 found (# 11)
R3DSTAT: points total 153510
R3DSTAT: Di 40 Drn pnts 1180 Src pnts 1239 Via pnts 9020 Tot W 4600 Tot CA 1127.5 Tot G 1127.5 Tot VA 1903 Tot VG 7612
Layer 5 (diff) points 11521
Layer 7 (metal1) points 46330
Layer 9 (metal2) points 39000
Layer 11 (metal3) points 56659
Layer resistivities and thicknesses:
Layer metal1 r [Ohm/sq] = 0.05 t [um] = 0.7
Layer via1 r [Ohm/via] = 1 unit_area [um2] = 0.25
Layer metal2 r [Ohm/sq] = 0.05 t [um] = 0.7
Layer via2 r [Ohm/via] = 1 unit_area [um2] = 0.25
Layer metal3 r [Ohm/sq] = 0.01 t [um] = 3.5
Start solution
IMS ordering...
IMS Ordering: wall:2.2s(5.7s), cpu:2.2s(5.6s), vmem:4M(353M)
IMS factorization...
IMS factorization: wall:3.4s(9.4s), cpu:3.4s(9.3s), vmem:0M(457M)
Current_[A]: s1: -0.072206 s2: -0.010789 s3: -0.007079 d1: 0.081765 d2: 0.004938 d3: 0.003371 V1: 0.090074 -0.090074 V2: 0.090074 -0.090074 S/D: -0.090074
Rdson_[Ohm] = 1.1102
*************************************************************
R3D results are linearly scaled from Ids=0.090074A to Ids=1A.
Top contact voltages and current after rescaling:
Name Voltage [V] Current [A]
---- ----------- -----------
s1 0 -0.801632
s2 0 -0.119777
s3 0 -0.0785912
d1 1.1102 0.907753
d2 1.1102 0.0548218
d3 1.1102 0.0374248
*************************************************************
Writing data to r3d_EM_analysis.dat file, R3DDRAW version 207
*************************************************************
Current density verification:
EM_RULE VIOLATIONS: 5 -- check the report file(s):
r3d_EM_analysis.em_report
GDS__r3d_EM_analysis/SD.gds.gz
*************************************************************
---------------------------------------------------------------
Table of resistive components contributions to Rdson (in Ohms)
---------------------------------------------------------------
Component Type Res_[Ohm] Source_[Ohm] Drain_[Ohm]
---------------------------------------------------------------
diff MET 0.00026936 0.000133608 0.000135753
metal1 MET 0.00148675 0.000738474 0.000748274
metal2 MET 0.0012088 0.000557409 0.000651388
metal3 MET 0.0131283 0.00641618 0.00671208
diff_cont VIA 0.00361167 0.00178295 0.00182872
via1 VIA 0.00189949 0.000938019 0.000961467
via2 VIA 0.00119244 0.000578912 0.000613524
s1 TC 0
s2 TC 0.000143466
s3 TC 0.000123533
d1 TC 0
d2 TC 9.01644e-05
d3 TC 7.00317e-05
---------------------------------------------------------------
Interconnects ALL 0.0232239 0.0114125 0.0118114
channel DEV 1.08697
Total Rdson 1.1102
===============================================================
Extracted channel/gate width [um]: 4600
Average channel resistivity [Ohm*um]: 5000.08
---------------------------------------------------------------
----------------------------------------------------
Top contact information
----------------------------------------------------
Name V_[V] I_[A] Node_name
----------------------------------------------------
s1 0 -0.801632 src
s2 0 -0.119777 src
s3 0 -0.0785912 src
d1 1.1102 0.907753 drn
d2 1.1102 0.0548218 drn
d3 1.1102 0.0374248 drn
----------------------------------------------------
Processed 1 segment: wall:13.6s, cpu:13.3s+0.0s, vmem:220M
Solving r3d_EM_analysis.cfg: wall:13.4s(13.6s), cpu:13.2s(13.3s), vmem:84M(220M)
[user01@node05 r3d_EM_analysis] |
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