Charge Pump Circuit Design [Pan, Feng and Samaddar, Tapan] Good Edition.pdf
Chapter 1. History of the High-Voltage Charge Pump 1
1.1 Using a Transformer to Generate High Voltages 1
1.2 The Cockcroft-Walton High-voltage Charge Pump 3
1.3 The Dickson Charge Pump 5
1.3.1 The body effect 6
1.3.2 Implication of body effect on the Dickson charge pump 7
1.4 Better Solutions 8
Chapter 2. Basic MOS Device Physics 11
2.1 The P-N Junction 12
2.1.1 Reverse bias 13
2.1.2 Forward bias 14
2.1.3 P-N junction diode characteristics 16
2.2 The MOS Capacitor 17
2.2.1 The flat band condition 17
2.2.2 Accumulation 18
2.2.3 Depletion 19
2.2.4 Weak inversion 21
2.2.5 Strong inversion 21
2.3 Capacitance Variation of a MOS 22
2.4 The Threshold Voltage 23
2.5 Metal-Oxide Field-Effect Transistor 27
2.5.1 Device operation 27
2.5.2 Second-order effects for MOSFET operation 32
2.6 Latch-up in CMOS Technology 33
2.7 Merits of PMOS Versus NMOS in Circuit Design 35
2.8 The MOSFET Model 36
2.9 SPICE Simulation Convergence 38
2.10 Conclusion 40
v
For more information about this title, click here
/3 
eetop公众号
创芯大讲堂
创芯人才网
发表于 2010-12-22 22:36:22
发表于 2010-12-23 12:02:41
不错的资料
